Name: NTMFS4983NFT1G
Brand: ON Semiconductor
SKU: NTMFS4983NFT1G
Availability: InStock

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NTMFS4983NFT1G

Manufacturer part number:NTMFS4983NFT1G

Manufacturer:ON Semiconductor

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.1m Ω @ 30A, 10V ±20V 3250pF @ 15V 47.9nC @ 10V 8-PowerTDFN

Case Package:SOT-23

Datasheet:NTMFS4983NFT1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Number of Pins	5
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Pin Count	5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.7W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	13.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.1m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3250pF @ 15V
Current - Continuous Drain (Id) @ 25°C	22A Ta 106A Tc
Gate Charge (Qg) (Max) @ Vgs	47.9nC @ 10V
Rise Time	24.9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10.7 ns
Turn-Off Delay Time	28.7 ns
Continuous Drain Current (ID)	106A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	22A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	320A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NTMFS4983NFT1G Product Details

NTMFS4983NFT1G Description

NTMFS4983NFT1G is a 30v Single N-Channel Power MOSFET. The onsemi NTMFS4983NFT1G can be applied in CPU Power Delivery, Synchronous Rectification for DC?DC Converters, Low Side Switching, and Telecom Secondary Side Rectification applications due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET NTMFS4983NFT1G is in the SO-8FL-4 package with 7.7W power dissipation.