Name: NTJS4151PT1G
Brand: ON Semiconductor
SKU: NTJS4151PT1G
Price: 0.41000 USD
Availability: InStock

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NTJS4151PT1G

Manufacturer part number:NTJS4151PT1G

Manufacturer:ON Semiconductor

Description:NTJS4151PT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTJS4151PT1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	47MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	-20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-3.3A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Number of Elements	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
Turn On Delay Time	850 ps
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	850pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3.3A Ta
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Rise Time	1.7ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	4.2 ns
Turn-Off Delay Time	2.7 ns
Continuous Drain Current (ID)	4.2A
Threshold Voltage	-400mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Height	1mm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

NTJS4151PT1G Product Details

NTJS4151PT1G Description

NTJS4151PT1G is a member of the family of N-channel power MOSFETs developed by ON Semiconductor based on the leading trench technology for low RDS (on) extending battery life. Moreover, it is able to provide fast switching for increased circuit efficiency. Due to its specific features, NTJS4151PT1G can be used for high-side load switches, cell phones, digital cameras, and more.