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NTGD4167CT1G

NTGD4167CT1G

NTGD4167CT1G

ON Semiconductor

NTGD4167CT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website

SOT-23

NTGD4167CT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Surface MountYES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 90MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation900mW
Terminal FormGULL WING
Base Part Number NTGD4167C
Pin Count6
Number of Elements 2
Element ConfigurationDual
Operating ModeENHANCEMENT MODE
Power Dissipation1.1W
Turn On Delay Time8 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 2.6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 295pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.6A 1.9A
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V
Rise Time8ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 8 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 2.6A
Threshold Voltage 900mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1mm
Length 3.1mm
Width 1.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:12121 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.573248$0.573248
10$0.540800$5.408
100$0.510189$51.0189
500$0.481310$240.655
1000$0.454066$454.066

NTGD4167CT1G Product Details

NTGD4167CT1G Description


A double complementary rectifier is used to provide positive and negative DC output with the same voltage. In most cases, the negative current is significantly smaller than the positive current requirement, so the relationship between AC voltage and current and DC voltage and current should be the same as the full-wave center of the tap described earlier.


NTGD4167CT1G Features

? Complementary N?Channel and P?Channel MOSFET

? Small Size (3 x 3 mm) Dual TSOP?6 Package

? Leading Edge Trench Technology for Low On Resistance

? Reduced Gate Charge to Improve Switching Response

? Independently Connected Devices to Provide Design Flexibility

? This is a Pb?Free Device


NTGD4167CT1G Applications


? DC?DC Conversion Circuits

? Load/Power Switching with Level Shift





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