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NTDV20P06LT4G

NTDV20P06LT4G

NTDV20P06LT4G

ON Semiconductor

NTDV20P06LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTDV20P06LT4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Lifecycle Status LIFETIME (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 150MOhm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 65W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time11 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 7.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15.5A Ta
Gate Charge (Qg) (Max) @ Vgs 26nC @ 5V
Rise Time90ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 70 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 15.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 50A
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:3925 items

NTDV20P06LT4G Product Details

NTDV20P06LT4G Description


NTDV20P06LT4G is a -60v single P-channel power MOSFET. The onsemi NTDV20P06LT4G can be applied in bridge circuits, power supplies, power motor controls, and DC-DC conversion applications due to the following features. The operating junction and storage temperature are between -55 and 175??. The NTDV20P06LT4G is in the TO-252-3 package with 65W.



NTDV20P06LT4G Features


  • Withstands High Energy in Avalanche and Commutation Modes

  • Low Gate Charge for Fast Switching

  • AEC Q101 Qualified ? NTDV20P06L

  • Pb?Free and are RoHS Compliant



NTDV20P06LT4G Applications


  • Bridge Circuits

  • Power Supplies

  • Power Motor Controls

  • DC?DC Conversion


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