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NTD80N02

NTD80N02

NTD80N02

ON Semiconductor

NTD80N02 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTD80N02 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2006
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 24V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating80A
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 75W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation75W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.8m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 20V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V
Rise Time67ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0058Ohm
Drain to Source Breakdown Voltage 24V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 733 mJ
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:2796 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.118473$0.118473
10$0.111767$1.11767
100$0.105441$10.5441
500$0.099472$49.736
1000$0.093842$93.842

NTD80N02 Product Details

NTD80N02 Description


NTD80N02 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 24V. The operating temperature of NTD80N02 is -55??C~150??C TJ and its maximum power dissipation is 75W Tc. NTD80N02 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.



NTD80N02 Features


  • These Devices are Pb?Free and are RoHS Compliant



NTD80N02 Applications


  • Power Supplies

  • Converters

  • Power Motor Controls

  • Bridge Circuits


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