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NTD5806NT4G

  • NTD5806NT4G - NTD5806NT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
  • NTD5806NT4G - NTD5806NT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

NTD5806NT4G

NTD5806NT4G

ON Semiconductor

NTD5806NT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTD5806NT4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 19MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 40W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation40W
Case Connection DRAIN
Turn On Delay Time10.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 860pF @ 25V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time49ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.6 ns
Turn-Off Delay Time 14.2 ns
Continuous Drain Current (ID) 33A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 65A
Avalanche Energy Rating (Eas) 38 mJ
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation HardeningNo
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1911 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.307738$3.307738
10$3.120507$31.20507
100$2.943875$294.3875
500$2.777240$1388.62
1000$2.620038$2620.038

NTD5806NT4G Product Details

NTD5806NT4G Description


The ON Semiconductor NTD5806NT4G Power MOSFET is a 40V, 33A, 19 mOhm RDS(on) Single N-Channel D2PAK Power MOSFET.



NTD5806NT4G Features


  • Low RDS(on)

  • High Current Capability

  • Avalanche Energy Specified

  • Pb-Free



NTD5806NT4G Applications


  • CCFL Backlight

  • DC Motor Control

  • Power Supply Secondary Side Synchronous Rectification


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