Name: NTD4963NT4G
Brand: ON Semiconductor
SKU: NTD4963NT4G
Price: 0.16000 USD
Availability: InStock

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NTD4963NT4G

Manufacturer part number:NTD4963NT4G

Manufacturer:ON Semiconductor

Description:NTD4963NT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NTD4963NT4G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	9.6MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	1.1W Ta 35.7W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	35.7W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1035pF @ 12V
Current - Continuous Drain (Id) @ 25°C	8.1A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs	16.2nC @ 10V
Rise Time	20ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	3 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	8.1A
Threshold Voltage	2.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Avalanche Energy Rating (Eas)	33.8 mJ
Nominal Vgs	2.5 V
Height	2.38mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

NTD4963NT4G Product Details

NTD4963NT4G Description

NTD4963NT4G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor. It is able to minimize conduction losses based on low RDS (on) and minimize driver losses based on low capacitance. Reduced switching losses can be ensured on the basis of optimized gate charge. Due to its high quality and reliable performance, it is optimized for a wide range of applications, including CPU power delivery, DC?DC converters, and more.