Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NTD32N06LT4G

NTD32N06LT4G

NTD32N06LT4G

ON Semiconductor

NTD32N06LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTD32N06LT4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Additional FeatureLOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 24V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating30A
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 1.5W Ta 93.75W Tj
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation93.75W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 16A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Ta
Gate Charge (Qg) (Max) @ Vgs 50nC @ 5V
Rise Time221ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
Fall Time (Typ) 128 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.028Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 90A
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:3828 items

NTD32N06LT4G Product Details

NTD32N06LT4G Description


NTD32N06LT4G is a 60v Single N-Channel Power MOSFET. The onsemi NTD32N06LT4G is designed for low voltage, high-speed switching applications in power supplies, converters and power motor controls, and bridge circuits. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET NTD32N06LT4G is in the TO-252-3 package with 93.75w power dissipation.



NTD32N06LT4G Features


  • Smaller Package than MTB30N06VL

  • Lower RDS(on)

  • Lower VDS(on)

  • Lower Total Gate Charge

  • Lower and Tighter VSD

  • Lower Diode Reverse Recovery Time

  • Lower Reverse Recovery Stored Charge

  • Pb-Free Packages are Available



NTD32N06LT4G Applications


  • Power Supplies

  • Converters

  • Power Motor Controls

  • Bridge Circuits


Get Subscriber

Enter Your Email Address, Get the Latest News