Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NTD32N06

NTD32N06

NTD32N06

ON Semiconductor

NTD32N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTD32N06 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2009
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.29.00.95
Subcategory FET General Purpose Powers
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating32A
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 1.5W Ta 93.75W Tj
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation93.75W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 26m Ω @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1725pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A Ta
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time84ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 93 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.026Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 90A
Avalanche Energy Rating (Eas) 313 mJ
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:1859 items

NTD32N06 Product Details

NTD32N06 Description


NTD32N06 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 60V. The operating temperature of the NTD32N06 is -55°C~175°C and its maximum power dissipation is 93.75W. TJNTD32N06 is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.



NTD32N06 Features


  • Pb?Free Packages are Available

  • Smaller Package than MTB36N06V

  • Lower RDS(on)

  • Lower VDS(on)

  • Lower Total Gate Charge

  • Lower and Tighter VSD

  • Lower Diode Reverse Recovery Time

  • Lower Reverse Recovery Stored Charge



NTD32N06 Applications


  • Power Supplies

  • Converters

  • Power Motor Controls

  • Bridge Circuits


Get Subscriber

Enter Your Email Address, Get the Latest News