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NTD2955T4G

NTD2955T4G

NTD2955T4G

ON Semiconductor

NTD2955T4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTD2955T4G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingCut Tape (CT)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 180mOhm
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-12A
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 55W Tj
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation55W
Case Connection DRAIN
Turn On Delay Time10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 180m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Ta
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time45ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 48 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 12A
Threshold Voltage -2.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Nominal Vgs -2.8 V
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:7577 items

Pricing & Ordering

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NTD2955T4G Product Details

NTD2955T4G Description


The NTD2955T4G Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low?voltage, high?speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.



NTD2955T4G Features


  • Avalanche Energy Specified

  • IDSS and VDS(on) Specified at Elevated Temperature

  • Designed for Low?Voltage, High?Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes

  • NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable

  • Pb?Free and RoHS Compliant



NTD2955T4G Applications


  • Switching Applications

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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