NTD12N10T4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTD12N10T4G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 day ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
12A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
1.28W Ta 56.6W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
56.6W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
165m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
550pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Ta
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Turn-Off Delay Time
22 ns
Continuous Drain Current (ID)
12A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Avalanche Energy Rating (Eas)
75 mJ
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:4085 items
NTD12N10T4G Product Details
NTD12N10T4G Description
NTD12N10T4G is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of the NTD12N10T4G is -55°C~175°C TJ and its maximum power dissipation is 56.6W. NTD12N10T4G has 3 pins and it is available in Tape & Reel (TR) packaging way. The Turn-Off Delay Time of NTD12N10T4G is 22 ns.
NTD12N10T4G Features
Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Avalanche Energy Specified
IDSS and RDS(on) Specified at Elevated Temperature
Mounting Information Provided for the DPAK Package
These are Pb?Free Devices
NTD12N10T4G Applications
PWM Motor Controls
Power Supplies
Converters
Related Products
Similar Transistors - FETs, MOSFETs - Single from ON Semiconductor and other manufacturers
