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NTB65N02RT4

NTB65N02RT4

NTB65N02RT4

ON Semiconductor

MOSFET N-CH 25V 7.6A D2PAK

SOT-23

NTB65N02RT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2012
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 24V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating65A
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 1.04W Ta 62.5W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation62.5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 20V
Current - Continuous Drain (Id) @ 25°C 65A Tc
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 4.5V
Rise Time53ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 65A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 7.6A
Drain-source On Resistance-Max 0.0105Ohm
Drain to Source Breakdown Voltage 24V
Pulsed Drain Current-Max (IDM) 160A
Avalanche Energy Rating (Eas) 60 mJ
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:4430 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.519570$0.51957
10$0.490160$4.9016
100$0.462415$46.2415
500$0.436241$218.1205
1000$0.411548$411.548

About NTB65N02RT4

The NTB65N02RT4 from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 25V 7.6A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NTB65N02RT4, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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