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NTA7002NT1G

NTA7002NT1G

NTA7002NT1G

ON Semiconductor

NTA7002NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTA7002NT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Number of Pins 3
Supplier Device Package SC-75, SOT-416
Operating Temperature-55°C~150°C TJ
PackagingCut Tape (CT)
Published 2005
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 7.5Ohm
Max Operating Temperature150°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating154mA
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 300mW Tj
Element ConfigurationSingle
Power Dissipation300mW
Turn On Delay Time13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7Ohm @ 154mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 20pF @ 5V
Current - Continuous Drain (Id) @ 25°C 154mA Tj
Rise Time15ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±10V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 98 ns
Continuous Drain Current (ID) 154mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 30V
Input Capacitance20pF
Drain to Source Resistance 1.4Ohm
Rds On Max 7 Ω
Nominal Vgs 1 V
Height 800μm
Length 1.65mm
Width 900μm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:24659 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.098880$0.09888
500$0.072706$36.353
1000$0.060588$60.588
2000$0.055586$111.172
5000$0.051949$259.745
10000$0.048325$483.25
15000$0.046736$701.04
50000$0.045955$2297.75

NTA7002NT1G Product Details

NTA7002NT1G Description

NTA7002NT1G transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes NTA7002NT1G MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

NTA7002NT1G Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

NTA7002NT1G Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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