The ON Semiconductor NSVMMUN2232LT1G is a single, pre-biased bipolar junction transistor (BJT) in a SOT23-3 package. It is designed for use in low-power, low-voltage applications. This device features a low collector-emitter saturation voltage of 0.2 V and a high current gain of 246 mW. It is suitable for use in a wide range of applications, including switching, amplification, and signal processing. The device is also RoHS compliant and has a maximum operating temperature of 150°C.
Features of the ON Semiconductor NSVMMUN2232LT1G include: • Low collector-emitter saturation voltage of 0.2 V • High current gain of 246 mW • RoHS compliant • Maximum operating temperature of 150°C • SOT23-3 package
Applications of the ON Semiconductor NSVMMUN2232LT1G include: • Switching • Amplification • Signal processing • Low-power, low-voltage applications
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