NSVJ5908DSG5T1G Description
NSVJ5908DSG5T1G transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes NSVJ5908DSG5T1G MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor NSVJ5908DSG5T1G has the common source configuration.
NSVJ5908DSG5T1G Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
NSVJ5908DSG5T1G Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
