NSV1C300ET4G Overview
This device has a DC current gain of 120 @ 1A 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -400mV, giving you a wide variety of design options.When VCE saturation is 400mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 3A for high efficiency.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.There is a breakdown input voltage of 100V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
NSV1C300ET4G Features
the DC current gain for this device is 120 @ 1A 2V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 300mA, 3A
the emitter base voltage is kept at 6V
NSV1C300ET4G Applications
There are a lot of ON Semiconductor NSV1C300ET4G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
