The ON Semiconductor NSBC143ZDXV6T1G is a pre-biased, two-NPN transistor array in a SOT563 package. It is designed for use in low-power applications such as portable electronics, consumer electronics, and automotive applications. The device features a low collector-emitter saturation voltage of 0.5V and a low collector-emitter leakage current of 0.1uA. It also has a high gain bandwidth product of 1.2GHz and a high current gain of 200. The device is RoHS compliant and is suitable for use in a wide range of applications.
Features of the ON Semiconductor NSBC143ZDXV6T1G include:
• Low collector-emitter saturation voltage of 0.5V • Low collector-emitter leakage current of 0.1uA • High gain bandwidth product of 1.2GHz • High current gain of 200 • RoHS compliant • Suitable for use in a wide range of applications
Applications of the ON Semiconductor NSBC143ZDXV6T1G include:
