ON SEMICONDUCTOR - NSB1706DMW5T1G - BRT TRANSISTOR, 50V, 47K/4.7KOHM, SOT353, FULL REEL
SOT-23
NSB1706DMW5T1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
5-TSSOP, SC-70-5, SOT-353
Surface Mount
YES
Number of Pins
5
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
BUILT-IN BIAS RESISTOR
Subcategory
BIP General Purpose Small Signal
Voltage - Rated DC
50V
Max Power Dissipation
250mW
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
NSB1706
Pin Count
5
Max Output Current
100mA
Operating Supply Voltage
50V
Number of Elements
2
Polarity
NPN
Configuration
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power Dissipation
187mW
Transistor Application
SWITCHING
Transistor Type
2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
80
Resistor - Base (R1)
4.7k Ω
Continuous Collector Current
100mA
Resistor - Emitter Base (R2)
47k Ω
Height
1mm
Length
2.2mm
Width
1.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:17305 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NSB1706DMW5T1G Product Details
Description: The ON Semiconductor NSB1706DMW5T1G is a pre-biased Bipolar Junction Transistor (BJT) Array in a SOT353 package. It is designed for use in low voltage, low power applications.
Features: • Pre-biased for low voltage, low power applications • Low voltage operation: 50V • High current gain: 47K/4.7KOhm • SOT353 package • Full reel
Applications: The ON Semiconductor NSB1706DMW5T1G is suitable for use in low voltage, low power applications such as audio amplifiers, power supplies, and motor control circuits. It can also be used in automotive, industrial, and consumer electronics.
Related Products
Similar Transistors - Bipolar (BJT) - Arrays, Pre-Biased from ON Semiconductor and other manufacturers
