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NGTD28T65F2WP

NGTD28T65F2WP

NGTD28T65F2WP

ON Semiconductor

NGTD28T65F2WP datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTD28T65F2WP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case Die
Operating Temperature-55°C~175°C TJ
PackagingBulk
Published 2016
Pbfree Code yes
Part StatusActive
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 650V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 200A
RoHS StatusROHS3 Compliant
In-Stock:2876 items

Pricing & Ordering

QuantityUnit PriceExt. Price
88$4.21830$371.2104

NGTD28T65F2WP Product Details

NGTD28T65F2WP Description


NGTD28T65F2WP is a 650v IGBT Die. The NGTD28T65F2WP Trench Field Stop II IGBT Die can be applied in Industrial Motor Drives, Solar Inverters, UPS Systems, and Welding applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor NGTD28T65F2WP is in the Bulk package.



NGTD28T65F2WP Features


Extremely Efficient Trench with Field Stop Technology

Low VCE(sat) Loss Reduces System Power Dissipation

Pulsed Collector Current (Note 2): 200A

Short Circuit Withstand Time, VGE = 15 V, VCE = 500V, TJ ≤ 150°C: 50μs



NGTD28T65F2WP Applications


Industrial Motor Drives

Solar Inverters

UPS Systems

Welding


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