NDT2955 Description
NDT2955 belongs to the family of P-channel enhancement-mode field-effect transistors (FETs) that are manufactured by ON Semiconductor based on the advanced high-voltage Trench process. It features a high-density cell design for extremely low RDS (on), as well as high power and current handling capability in a widely used surface-mount package. Due to its high quality and reliable performance, it is well suited for power management applications. More information can be found in the NDT2955 datasheet.
NDT2955 Features
Advanced high-voltage Trench process
High-density cell design
Extremely low RDS (on)
High power and current handling capability
Available in the SOT-223 package
NDT2955 Applications
DC-DC converter
Power management
