NDP4060L Description
Logic level N-Channel enhancement mode power field effect transistors are made utilizing a high cell density DMOS process that is exclusive to Fairchild. In the avalanche and commutation modes, this very high density technology has been specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. These components are especially well suited for battery-powered circuits that require quick switching, little in-line power loss, and resilience to transients, such as automotive, DC/DC converters, PWM motor controllers, and other battery-powered applications.
NDP4060L Features
15A, 60V. RDS(ON) = 0.1W @ VGS = 5V
Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDP4060L Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
