NDP4050 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high-energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery-powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP4050 Features
15A 50V. Rscon = 0.10Q @ Vcs=10V.
Critical DC eledrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175*C maximum junction temperature rating.
High densily cell design for extremely low Rxspor
TO-220 and T0-263 (D"PAK) package for both through hole
and surface mount applications.
