Name: NDF11N50ZG
Brand: ON Semiconductor
SKU: NDF11N50ZG
Price: 0.57000 USD
Availability: InStock

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NDF11N50ZG

Manufacturer part number:NDF11N50ZG

Manufacturer:ON Semiconductor

Description:NDF11N50ZG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NDF11N50ZG Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	39W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	39W
Case Connection	ISOLATED
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	520m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1645pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	69nC @ 10V
Rise Time	32ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	3.9V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	6.7A
Drain-source On Resistance-Max	0.52Ohm
Drain to Source Breakdown Voltage	500V
Pulsed Drain Current-Max (IDM)	42A
Avalanche Energy Rating (Eas)	420 mJ
Nominal Vgs	3.9 V
Height	16.12mm
Length	10.63mm
Width	4.9mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

NDF11N50ZG Product Details

NDF11N50ZG Description

NDF11N50ZG belongs to the family of N-channel power MOSFET provided by ON Semiconductor. It is able to provide low on-state resistance, 100% avalanche rated, and low gate charge. These characteristics make it efficient and reliable in a wide range of applications, including uninterruptible power supplies and synchronous rectification.