NDD03N80ZT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NDD03N80ZT4G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
9 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 3 days ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
96W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
96W
Case Connection
DRAIN
Turn On Delay Time
9 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
4.5 Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
440pF @ 25V
Current - Continuous Drain (Id) @ 25°C
2.9A Tc
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Rise Time
7ns
Drain to Source Voltage (Vdss)
800V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
9 ns
Turn-Off Delay Time
17 ns
Continuous Drain Current (ID)
2.9A
Gate to Source Voltage (Vgs)
30V
DS Breakdown Voltage-Min
800V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:2898 items
NDD03N80ZT4G Product Details
NDD03N80ZT4G Description
This NDD03N80Z is a Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel device with DPAK package. The operating temperature of the NDD03N80ZT4G is -55??C~150??C TJ and its maximum power dissipation is 96W Tc. NDD03N80ZT4G has 4 pins and it is available in Tape & Reel (TR) packaging way. The Drain to Source Voltage (Vdss) of NDD03N80ZT4G is 800V.
NDD03N80ZT4G Features
ESD Diode?Protected Gate
100% Avalanche Tested
100% Rg Tested
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
NDD03N80ZT4G Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
Related Products
Similar Transistors - FETs, MOSFETs - Single from ON Semiconductor and other manufacturers
