NDC7001C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available on our website
SOT-23
NDC7001C Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
36mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2002
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
2Ohm
Subcategory
Other Transistors
Max Power Dissipation
700mW
Terminal Form
GULL WING
Current Rating
350mA
Number of Elements
2
Number of Channels
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
960mW
Turn On Delay Time
2.8 ns
FET Type
N and P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2 Ω @ 510mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
20pF @ 25V
Current - Continuous Drain (Id) @ 25°C
510mA 340mA
Gate Charge (Qg) (Max) @ Vgs
1.5nC @ 10V
Rise Time
10ns
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Fall Time (Typ)
10 ns
Turn-Off Delay Time
8 ns
Continuous Drain Current (ID)
510mA
Threshold Voltage
2.1V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.51A
Drain to Source Breakdown Voltage
60V
Dual Supply Voltage
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)
150°C
FET Feature
Logic Level Gate
Nominal Vgs
2.1 V
Min Breakdown Voltage
60V
Height
900μm
Length
3mm
Width
1.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:13055 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
NDC7001C Product Details
NDC7001C Description
The NDC7001C is a dual N and P-Channel Enhancement Mode Field Effect Transistor made with ON Semiconductor's unique DMOS technology. This high-density method was created to reduce on-state resistance, provide durable and reliable performance, and allow for quick switching. Low voltage, low current, switching, and power supply applications are ideal for the NDC7001C transistor.
NDC7001C Features
Q1: 0.51 A, 60 V RDS(ON) = 2 Ω @ VGS = 10 V RDS(ON) = 4 Ω @ VGS = 4.5 V Q2: -0.34 A, 60 V RDS(ON) = 5 Ω @ VGS = -10 V RDS(ON) = 7.5 Ω @ VGS = -4.5 V High density cell design for low RDS (ON) Design using copper lead-frame for superior thermal and electrical capabilities
NDC7001C Applications
Industrial Power Management Automotive Vehicle Electrification ADAS Powertrain, Safety and Security Body Electronics and LED Lighting Technology
Related Products
Similar Transistors - FETs, MOSFETs - Arrays from ON Semiconductor and other manufacturers
