NDC652P Description
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery-powered circuits where fast high-side switching and low in-line power loss are needed in a very small outline surface mount package.
NDC652P Features
2.4A, -30V. RDS(ON) = 0.18W @ VGS = -4.5V
RDS(ON) = 0.11W @ VGS = -10V.
Proprietary SuperSOTTM-6 package design using copper
lead frame for superior thermal and electrical capabilities.
High-density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
