Current Limiting (Fixed), Over Temperature, Over Voltage
Drain to Source Breakdown Voltage
55V
Output Peak Current Limit-Nom
4.8A
Rds On (Typ)
165m Ω
Drain to Source Resistance
165mOhm
Built-in Protections
TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL
Output Current Flow Direction
SINK
Length
4.9mm
Width
3.9mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4458 items
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Unit Price
Ext. Price
NCV8402ADDR2G Product Details
NCV8402ADDR2G Description
NCV8402ADDR2G MOSFET features a two-channel Three terminals-protected Low-Side smart Discrete device. NCV8402ADDR2G ON Semiconductor protection features include overcurrent and overtemperature ESD and Drain-to-Gate clamping to protect against overvoltage. NCV8402ADDR2G circuit provides protection and is ideal for harsh environments in the automotive industry.
NCV8402ADDR2G Features
Short Circuit Protection Thermal Shutdown with Automatic Restart Integrated Clamp for Inductive Switching ESD Protection dV/dt Robustness Analog Drive Capability (Logic Level Input) AEC-Q101 Qualified NCV Prefix for Automotive and Other Applications Requiring Site and Change Control
NCV8402ADDR2G Applications
Switch a Variety of Resistive, Inductive and Capacitive Loads Can Replace Electromechanical Relays and Discrete Circuits Lamp Driver Relay Driver
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