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MUN5330DW1T1G

MUN5330DW1T1G

MUN5330DW1T1G

ON Semiconductor

MUN5330DW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available on our website

SOT-23

MUN5330DW1T1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface MountYES
Number of Pins 6
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Additional FeatureBUILT-IN BIAS RESISTOR RATIO 1
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation250mW
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MUN53**DW1
Pin Count6
Max Output Current100mA
Operating Supply Voltage50V
Number of Elements 2
Polarity NPN, PNP
Element ConfigurationDual
Power Dissipation187mW
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 3 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage50V
Max Frequency 10kHz
Collector Emitter Saturation Voltage250mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 3
Resistor - Base (R1) 1k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 1k Ω
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:21994 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About MUN5330DW1T1G

The MUN5330DW1T1G from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MUN5330DW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available on our website.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MUN5330DW1T1G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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