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MUN5311DW1T1

MUN5311DW1T1

MUN5311DW1T1

ON Semiconductor

TRANS PREBIAS NPN/PNP SOT363

SOT-23

MUN5311DW1T1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
PackagingCut Tape (CT)
Published 2008
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Additional FeatureBUILT-IN BIAS RESISTOR RATIO 1
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation250mW
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating100mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MUN53**DW1
Pin Count6
Qualification StatusNot Qualified
Number of Elements 2
Polarity NPN, PNP
Element ConfigurationDual
Power Dissipation187mW
Power - Max 385mW
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage50V
Resistor - Base (R1) 10k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10k Ω
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:120254 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.05000$0.05
500$0.0495$24.75
1000$0.049$49
1500$0.0485$72.75
2000$0.048$96
2500$0.0475$118.75

MUN5311DW1T1 Product Details

The ON Semiconductor MUN5311DW1T1 is a pre-biased NPN/PNP transistor array in a SOT363 package. It is designed for use in low-power, low-voltage applications. The device features two NPN transistors and two PNP transistors in a single package. The transistors are pre-biased, meaning that the base-emitter junction of each transistor is already forward-biased, allowing for faster switching times and improved performance.

The MUN5311DW1T1 is ideal for use in applications such as motor control, power management, and signal conditioning. It is also suitable for use in automotive, industrial, and consumer electronics applications. The device features a low saturation voltage, low power consumption, and a wide operating temperature range. It is also RoHS compliant and halogen-free.

The MUN5311DW1T1 is a versatile device that can be used in a variety of applications. It is suitable for use in low-power, low-voltage applications such as motor control, power management, and signal conditioning. It is also suitable for use in automotive, industrial, and consumer electronics applications.

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