MUN5215T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website
SOT-23
MUN5215T1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
BUILT-IN BIAS RESISTOR
Subcategory
BIP General Purpose Small Signal
Voltage - Rated DC
50V
Max Power Dissipation
202mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MUN52**T
Pin Count
3
Max Output Current
100mA
Operating Supply Voltage
50V
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
202mW
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Transistor Type
NPN - Pre-Biased
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
50V
Max Frequency
10kHz
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
6V
hFE Min
160
Resistor - Base (R1)
10 k Ω
Continuous Collector Current
100mA
Height
850μm
Length
2.2mm
Width
1.24mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
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MUN5215T1G Product Details
MUN5215T1G Description
ON Semiconductor's MUN5215T1G NPN Bipolar Digital Transistor (BRT) is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a single transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. By integrating these different components into a single unit, the BRT eliminates them.
MUN5215T1G Features
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
MUN5215T1G Applications
Industrial
Automotive
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