Name: MUN5116DW1T1G
Brand: ON Semiconductor
SKU: MUN5116DW1T1G
Price: 0.38000 USD
Availability: InStock

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MUN5116DW1T1G

Manufacturer part number:MUN5116DW1T1G

Manufacturer:ON Semiconductor

Description:MUN5116DW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MUN5116DW1T1G Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	2 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT-IN BIAS RESISTOR
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	-50V
Max Power Dissipation	250mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-100mA
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	MUN51**DW1T
Pin Count	6
Max Output Current	100mA
Operating Supply Voltage	50V
Number of Elements	2
Polarity	PNP
Element Configuration	Dual
Transistor Application	SWITCHING
Halogen Free	Halogen Free
Transistor Type	2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage	50V
Collector Emitter Saturation Voltage	250mV
hFE Min	160
Resistor - Base (R1)	4.7k Ω
Continuous Collector Current	-100mA
Height	900μm
Length	2mm
Width	1.25mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

About MUN5116DW1T1G

The MUN5116DW1T1G from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MUN5116DW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available on our website.

Key Features

Advanced AVR architecture for efficient processing
Wide operating temperature range: -40°C to 85°C
Low power consumption for energy-efficient applications
Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

Industrial control systems
Consumer electronics
Automotive systems
IoT devices
Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MUN5116DW1T1G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.