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MUN5111T1G

  • MUN5111T1G - MUN5111T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website
  • MUN5111T1G - MUN5111T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

MUN5111T1G

MUN5111T1G

ON Semiconductor

MUN5111T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

SOT-23

MUN5111T1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface MountYES
Number of Pins 3
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature150°C
Min Operating Temperature -55°C
Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC -50V
Max Power Dissipation202mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-100mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MUN51**T
Pin Count3
Max Output Current100mA
Operating Supply Voltage50V
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power Dissipation202mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage50V
Collector Emitter Saturation Voltage250mV
Max Breakdown Voltage 50V
hFE Min 35
Resistor - Base (R1) 10 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10 k Ω
Height 900μm
Length 2.2mm
Width 1.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:44929 items

Pricing & Ordering

QuantityUnit PriceExt. Price

MUN5111T1G Product Details

MUN5111T1G Description


The ON Semiconductor MUN5111T1G is designed to replace a single device and its external resistor bias network.



MUN5111T1G Features


  • Simplifies Circuit Design

  • Reduces Board Space

  • Reduces Component Count

  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable



MUN5111T1G Applications


  • Consumer Electronics

  • Portable Devices

  • Industrial


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