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MUN2213JT1G

MUN2213JT1G

MUN2213JT1G

ON Semiconductor

TRANS PREBIAS NPN 338MW SC59

SOT-23

MUN2213JT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
PackagingTape & Reel (TR)
Published 2009
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 50V
Max Power Dissipation338mW
Current Rating100mA
Base Part Number MUN2213
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage50V
Resistor - Base (R1) 47 k Ω
Resistor - Emitter Base (R2) 47 k Ω
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:352739 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.02000$0.02
500$0.0198$9.9
1000$0.0196$19.6
1500$0.0194$29.1
2000$0.0192$38.4
2500$0.019$47.5

About MUN2213JT1G

The MUN2213JT1G from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features TRANS PREBIAS NPN 338MW SC59.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the MUN2213JT1G, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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