Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MUN2111T1G

MUN2111T1G

MUN2111T1G

ON Semiconductor

MUN2111T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

SOT-23

MUN2111T1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact PlatingTin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface MountYES
Number of Pins 3
Weight 7.994566mg
PackagingTape & Reel (TR)
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature150°C
Min Operating Temperature -55°C
Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC -50V
Max Power Dissipation230mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-100mA
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MUN2111
Pin Count3
Max Output Current100mA
Operating Supply Voltage50V
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage50V
Collector Emitter Saturation Voltage250mV
Max Breakdown Voltage 50V
hFE Min 35
Resistor - Base (R1) 10 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 10 k Ω
Height 1.09mm
Length 2.9mm
Width 1.5mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:39531 items

Pricing & Ordering

QuantityUnit PriceExt. Price

MUN2111T1G Product Details

MUN2111T1G Description


The MUN2211T1G from ON Semiconductor is an NPN Bipolar Digital Transistor (BRT) with a single transistor and a monolithic bias network consisting of two resistors.



MUN2111T1G Features


  • Simplifies Circuit Design

  • Reduces Board Space

  • Reduces Component Count

  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable



MUN2111T1G Applications


  • Automotive

  • Power Management

  • Industrial


Get Subscriber

Enter Your Email Address, Get the Latest News