Name: MTP50P03HDLG
Brand: ON Semiconductor
SKU: MTP50P03HDLG
Availability: InStock

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MTP50P03HDLG

Manufacturer part number:MTP50P03HDLG

Manufacturer:ON Semiconductor

Description:MTP50P03HDLG datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MTP50P03HDLG Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 5 days ago)
Contact Plating	Tin
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	25MOhm
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Voltage - Rated DC	-30V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Current Rating	-50A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
Number of Elements	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Case Connection	DRAIN
Turn On Delay Time	22 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	25m Ω @ 25A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 5V
Rise Time	340ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±15V
Fall Time (Typ)	218 ns
Turn-Off Delay Time	90 ns
Continuous Drain Current (ID)	50A
Threshold Voltage	-1.5V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	15V
Drain to Source Breakdown Voltage	30V
Height	14.478mm
Length	10.2616mm
Width	4.826mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

MTP50P03HDLG Product Details

MTP50P03HDLG Description

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy-efficient design also offers a drain?to?source diode with a fast recovery time. Designed for low voltage, high-speed switching applications in power supplies, converters, and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin

against unexpected voltage transients.