Name: MTP2P50E
Brand: ON Semiconductor
SKU: MTP2P50E
Availability: InStock

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MTP2P50E

Manufacturer part number:MTP2P50E

Manufacturer:ON Semiconductor

Description:MTP2P50E datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MTP2P50E Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 5 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	HIGH VOLTAGE
Subcategory	Other Transistors
Voltage - Rated DC	-500V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	-2A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	75W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	75W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1183pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	14ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	2A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	2A
Drain-source On Resistance-Max	6Ohm
Drain to Source Breakdown Voltage	-500V
Pulsed Drain Current-Max (IDM)	6A
Avalanche Energy Rating (Eas)	80 mJ
Height	9.28mm
Length	10.28mm
Width	4.82mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

MTP2P50E Product Details

MTP2P50E Description

An upgraded termination strategy is used by this high voltage MOSFET to deliver improved voltage blocking without deteriorating performance over time. In the avalanche and commutation modes, this Power MOSFET is also built to handle tremendous energy.

Another feature of the energy-efficient design is a drain-to-source diode with a quick recovery period. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for high voltage, high speed switching applications in power supplies, converters, and PWM motor controls.

MTP2P50E Features

Robust High Voltage Termination
Avalanche Energy Specified
Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
This is a Pb?Free Device*