Name: MTP23P06V
Brand: ON Semiconductor
SKU: MTP23P06V
Availability: InStock

new-10%

MTP23P06V

Manufacturer part number:MTP23P06V

Manufacturer:ON Semiconductor

Description:MTP23P06V datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MTP23P06V Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2001
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	235
Reach Compliance Code	not_compliant
Current Rating	-23A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	90W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	90W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	120m Ω @ 11.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1620pF @ 25V
Current - Continuous Drain (Id) @ 25°C	23A Tc
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Rise Time	98.3ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±15V
Fall Time (Typ)	62 ns
Turn-Off Delay Time	41 ns
Continuous Drain Current (ID)	23A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	15V
Drain to Source Breakdown Voltage	-60V
Avalanche Energy Rating (Eas)	794 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

MTP23P06V Product Details

MTP23P06V Description

High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. These devices are especially well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls.