Name: MTD6P10E
Brand: ON Semiconductor
SKU: MTD6P10E
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	AVALANCHE RATED
Subcategory	Other Transistors
Voltage - Rated DC	-100V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Reach Compliance Code	not_compliant
Current Rating	-6A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.75W Ta 50W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	660m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	840pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V
Rise Time	29ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±15V
Continuous Drain Current (ID)	6A
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.66Ohm
Pulsed Drain Current-Max (IDM)	18A
Avalanche Energy Rating (Eas)	180 mJ
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead

MTD6P10E Product Details

Description

The MTD6P10E is a Power MOSFET, 6 Amps, 100 Volts with P?Channel DPAK. High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. Another feature of the energy-efficient design is a drain-to-source diode with a quick recovery period. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high-speed switching applications in power supplies, converters, and PWM motor controls.

Features

Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Pb?Free Packages are Available
Avalanche Energy Specified
Source?to?Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode