MSD42SWT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 1mA 10V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 200mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.This device has a current rating of 150mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.In the part, the transition frequency is 50MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.
MSD42SWT1G Features
the DC current gain for this device is 25 @ 1mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 150mA
a transition frequency of 50MHz
MSD42SWT1G Applications
There are a lot of ON Semiconductor MSD42SWT1G applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
