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MPSA29-D26Z

MPSA29-D26Z

MPSA29-D26Z

ON Semiconductor

MPSA29-D26Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSA29-D26Z Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 23 hours ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 201mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Power Dissipation625mW
Terminal Position BOTTOM
Base Part Number MPSA29
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power - Max 625mW
Transistor Application AMPLIFIER
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage100V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage1.2V
Max Breakdown Voltage 100V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 12V
hFE Min 10000
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:14356 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.378480$0.37848
10$0.357057$3.57057
100$0.336846$33.6846
500$0.317779$158.8895
1000$0.299792$299.792

MPSA29-D26Z Product Details

MPSA29-D26Z Overview


In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.2V.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 12V can result in a high level of efficiency.125MHz is present in the transition frequency.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 800mA volts is possible.

MPSA29-D26Z Features


the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
a transition frequency of 125MHz

MPSA29-D26Z Applications


There are a lot of ON Semiconductor MPSA29-D26Z applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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