MPSA18RLRA Overview
DC current gain in this device equals 500 @ 10mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 80mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 5mA, 50mA.An emitter's base voltage can be kept at 6.5V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 200mA.In the part, the transition frequency is 160MHz.A breakdown input voltage of 45V volts can be used.The maximum collector current is 200mA volts.
MPSA18RLRA Features
the DC current gain for this device is 500 @ 10mA 5V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6.5V
the current rating of this device is 200mA
a transition frequency of 160MHz
MPSA18RLRA Applications
There are a lot of ON Semiconductor MPSA18RLRA applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
