MMUN2235LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website
SOT-23
MMUN2235LT1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
BIP General Purpose Small Signal
Max Power Dissipation
246mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Number of Elements
1
Polarity
NPN
Configuration
SINGLE WITH BUILT-IN RESISTOR
Power - Max
246mW
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Transistor Type
NPN - Pre-Biased
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
50V
hFE Min
80
Resistor - Base (R1)
2.2 k Ω
Resistor - Emitter Base (R2)
47 k Ω
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:50920 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
MMUN2235LT1G Product Details
MMUN2235LT1G Description
The MMUN2235LT1G from ON Semiconductor is an NPN Bipolar Digital Transistor (BRT) designed to replace a single device and its external resistor bias network.
MMUN2235LT1G Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Pb-free, Halogen Free/BFR Free and are RoHS Compliant
MMUN2235LT1G Applications
Power Management
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