MMUN2214LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website
SOT-23
MMUN2214LT1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 20 hours ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 4.7
Subcategory
BIP General Purpose Small Signal
Voltage - Rated DC
50V
Max Power Dissipation
246mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MMUN22**L
Pin Count
3
Max Output Current
100mA
Operating Supply Voltage
50V
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
246mW
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Transistor Type
NPN - Pre-Biased
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA 10V
Current - Collector Cutoff (Max)
500nA
Vce Saturation (Max) @ Ib, Ic
250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Max Breakdown Voltage
50V
hFE Min
80
Resistor - Base (R1)
10 k Ω
Continuous Collector Current
100mA
Resistor - Emitter Base (R2)
47 k Ω
Height
940μm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:43829 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.405956
$1.405956
10
$1.326373
$13.26373
100
$1.251295
$125.1295
500
$1.180467
$590.2335
1000
$1.113649
$1113.649
MMUN2214LT1G Product Details
MMUN2114LT1G Description
The ON Semiconductor MMUN2114LT1G is an NPN Transistor with a Monolithic Bias Resistor Network. The digital transistor is designed to replace a single device and its external resistor bias network.
MMUN2114LT1G Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
MMUN2114LT1G Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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