MMBT6517LT1G Overview
This device has a DC current gain of 20 @ 50mA 10V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 5mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.40MHz is present in the transition frequency.A breakdown input voltage of 350V volts can be used.Maximum collector currents can be below 100mA volts.
MMBT6517LT1G Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 40MHz
MMBT6517LT1G Applications
There are a lot of ON Semiconductor MMBT6517LT1G applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
