MMBT5962 PNP Amplifier Description
Because the MMBT5962 is an NPN transistor, the collector and emitter are open (reverse biased) while the base pin is maintained at the ground and closed (forward-biased) when a signal is applied to the base pin. MMBT5962 has a gain value of 900 (usually), with a maximum of 1200. This number influences the amplification capacity, which with this transistor is quite high.
MMBT5962 PNP Amplifier Features
Higher gain value
Low noise
Pb free device
Low current (max. 100nA)
Low voltage (max. 30V)
Collector-Emitter Voltage: 30 Vdc
Collector-Base Voltage: 35 Vdc
Emitter-Base Voltage: 3.0 Vdc
DC current gain: 1200 hFe (max.)
Operating and Junction Temperature: –55 to +150 °C
MMBT5962 PNP Amplifier Applications
