Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MMBT5550LT1

MMBT5550LT1

MMBT5550LT1

ON Semiconductor

MMBT5550LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT5550LT1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
Package / Case SOT-23-3
Number of Pins 3
PackagingCut Tape (CT)
Published 2001
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature150°C
Min Operating Temperature -55°C
Voltage - Rated DC 140V
Max Power Dissipation225mW
Current Rating600mA
Polarity NPN
Element ConfigurationSingle
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 600mA
Collector Emitter Breakdown Voltage140V
Collector Emitter Saturation Voltage150mV
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 6V
hFE Min 60
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:354635 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.02000$0.02
500$0.0198$9.9
1000$0.0196$19.6
1500$0.0194$29.1
2000$0.0192$38.4
2500$0.019$47.5

MMBT5550LT1 Product Details

MMBT5550LT1 Overview


A collector emitter saturation voltage of 150mV allows maximum design flexibility.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 600mA.When collector current reaches its maximum, it can reach 600mA volts.

MMBT5550LT1 Features


a collector emitter saturation voltage of 150mV
the emitter base voltage is kept at 6V
the current rating of this device is 600mA

MMBT5550LT1 Applications


There are a lot of ON Semiconductor MMBT5550LT1 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

Get Subscriber

Enter Your Email Address, Get the Latest News