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MMBT4355

MMBT4355

MMBT4355

ON Semiconductor

MMBT4355 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT4355 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code compliant
Power - Max 350mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 800mA
In-Stock:3887 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$13.643840$13.64384
10$12.871547$128.71547
100$12.142969$1214.2969
500$11.455631$5727.8155
1000$10.807199$10807.199

MMBT4355 Product Details

MMBT4355 Overview


This device has a DC current gain of 100 @ 10mA 10V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

MMBT4355 Features


the DC current gain for this device is 100 @ 10mA 10V
the vce saturation(Max) is 1V @ 100mA, 1A

MMBT4355 Applications


There are a lot of ON Semiconductor MMBT4355 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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