MMBFJ111 datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
MMBFJ111 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
ACTIVE (Last Updated: 11 hours ago)
Factory Lead Time
16 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
HTS Code
8541.21.00.95
Voltage - Rated DC
35V
Max Power Dissipation
350mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
20mA
Base Part Number
MBFJ111
Number of Elements
1
Element Configuration
Single
Operating Mode
DEPLETION MODE
Power Dissipation
350mW
FET Type
N-Channel
Transistor Application
SWITCHING
Breakdown Voltage
-35V
Drain to Source Voltage (Vdss)
35V
Continuous Drain Current (ID)
20mA
Gate to Source Voltage (Vgs)
-35V
FET Technology
JUNCTION
Drain to Source Resistance
30Ohm
Feedback Cap-Max (Crss)
5 pF
Current - Drain (Idss) @ Vds (Vgs=0)
20mA @ 15V
Voltage - Cutoff (VGS off) @ Id
3V @ 1μA
Resistance - RDS(On)
30Ohm
Height
1.04mm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:14228 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
MMBFJ111 Product Details
MMBFJ111 Description
The ON Semiconductor MMBFJ111N-Channel Switch is designed for low-level analogue switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51.
MMBFJ111 Features
Sourced from process 51
Source & Drain are interchangeable
MMBFJ111 Applications
New Energy Vehicles, Photovoltaic & Wind Power Generation, Smart Grid
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