MMBFJ110 datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
MMBFJ110 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Lifecycle Status
ACTIVE (Last Updated: 10 hours ago)
Factory Lead Time
21 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
18Ohm
Terminal Finish
Tin (Sn)
HTS Code
8541.21.00.95
Max Power Dissipation
460mW
Terminal Position
DUAL
Terminal Form
GULL WING
Base Part Number
MBFJ110
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
460mW
FET Type
N-Channel
Transistor Application
SWITCHING
Drain to Source Voltage (Vdss)
25V
Continuous Drain Current (ID)
10mA
Gate to Source Voltage (Vgs)
-25V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance
18Ohm
Current - Drain (Idss) @ Vds (Vgs=0)
10mA @ 15V
Voltage - Cutoff (VGS off) @ Id
4V @ 10nA
Resistance - RDS(On)
18Ohm
Height
940μm
Length
2.92mm
Width
1.4mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:16704 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
MMBFJ110 Product Details
MMBFJ110 Description
Switch with N-Channels MMBFJ110 is intended for analog or digital switching applications requiring extremely low on-resistance. Process 58 was used as a source.
MMBFJ110 Features
Sourced from process 58
This device is designed for digital switching applications where very low on-resistance is mandatory.
MMBFJ110 Applications
Analog switching applications
Digital switching applications
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