Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MMBFJ108

MMBFJ108

MMBFJ108

ON Semiconductor

MMBFJ108 datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

MMBFJ108 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 24 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 25V
Max Power Dissipation350mW
Terminal Position DUAL
Terminal FormGULL WING
Current Rating80mA
Base Part Number MBFJ108
Number of Elements 1
Element ConfigurationSingle
Operating ModeDEPLETION MODE
Power Dissipation350mW
FET Type N-Channel
Transistor Application SWITCHING
Breakdown Voltage-25V
Drain to Source Voltage (Vdss) 25V
Continuous Drain Current (ID) 80mA
Gate to Source Voltage (Vgs) -25V
FET Technology JUNCTION
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 8Ohm
Current - Drain (Idss) @ Vds (Vgs=0) 80mA @ 15V
Voltage - Cutoff (VGS off) @ Id 3V @ 10nA
Resistance - RDS(On) 8Ohm
Height 1.22mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9592 items

Pricing & Ordering

QuantityUnit PriceExt. Price

MMBFJ108 Product Details

MMBFJ108 Description


The MMBFJ108 is an N-channel JFET developed for digital switching applications that require extremely low ON resistance.


MMBFJ108 Features

25V Drain-gate voltage
-25V Gate-source voltage
10mA Forward gate current



MMBFJ108 Applications

Industrial
Power Management

Get Subscriber

Enter Your Email Address, Get the Latest News